干法刻蚀影响应变量子阱发光的机理研究  

Effect of dry etching on light emission of InAsP/InP SMQWs

作　　者：曹萌[1] 吴惠桢[1] 刘成[1] 劳燕锋[1] 黄占超[1] 谢正生[1] 张军[2] 江山[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室 [2]武汉邮电科学研究院,武汉430074

出　　处：《物理学报》2007年第2期1027-1031,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973)(批准号:2003CB314903)资助的课题~~

摘　　要：采用感应耦合等离子体刻蚀技术对InAsP/InP应变多量子阱和InAsP/InGaAsP应变单量子阱材料的覆盖层进行了不同厚度的干法刻蚀.实验结果表明,干法刻蚀后量子阱光致荧光强度得到了不同程度的增强.干法刻蚀过程不仅增加了材料表面粗糙度,同时使其内部微结构发生变化.采用湿法腐蚀方法去除表面变粗糙对量子阱发光特性的影响,得到干法刻蚀覆盖层20nm后应变单量子阱微结构变化和其表面粗糙度变化两个因素分别使荧光强度提高1.8倍和1.2倍的结果.The cap layers of InAsP/InP SMQWs and InAsP/InGaAsP strained single quantum wells （SSQW） are etched to different depths using ICP. The PL intensity of the quantum wells is enhanced by different degrees after dry etching. The quantum well surface becomes rough and the microstructure inside the quantum well is changed during dry etching. The influence of surface roughness to the photoluminescence of quantum well is eliminated by selectively wet etching the In_P cap layer of the SSQW It is attained that after the cap layer is dry etched off about 20 um the PL intensity of SSQW is enhanced about 1.8 and 1.2 times due to the change in microstructure and the roughening of surface, respectively.

关 键 词：干法刻蚀 应变多量子阱 光致发光谱 损伤 

分 类 号：O471[理学—半导体物理]