工艺参数对射频磁控溅射PTFE靶形成的等离子体组成的影响  

The Effect of Process Parameters on Plasma Environment of RF Magnetron Sputtering PTFE Target With Negative Pulse-Voltage Bias

作　　者：唐光泽[1] 马欣新[1] 孙明仁[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《中国表面工程》2007年第1期35-37,共3页China Surface Engineering

摘　　要：采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射PTFE靶等离子体气氛的影响规律。结果表明:增加脉冲偏压、脉冲频率、脉宽、射频功率和气压能提高Ar离子对PTFE靶的溅射能力,增加空间中氟碳自由基的数量,其中各参数对峰位位于25.0aum处的氟碳自由基强度影响最大:脉冲电压从10kV提高到20kV能将该峰强度提高2倍;脉宽从40s提高到100μs强度提高80倍;频率从50Hz提高到200Hz强度提高4倍;溅射气压由0.1Pa提高到0.3Pa强度提高6倍;射频功率由200W提高到400W强度提高6倍。励磁电流能有效的约束氟碳自由基的空间分布。Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias. The results showed that increasing of the bias voltage, pulse frequency, pulse width, RF power and sputtering pressure can enhance the sputtering rate of PTFE target and increase the proportion of fluorocarbon radical in plasma; especially at the peak on 25.0 aum, it is mostly effected by the process parameters： the intensity can be increased twice, eighty times, four times, six times and six times, respectively, when the pulsed-voltage, pulse width, frequency, sputtering pressure and RF power are varied from 10 kV to 20 kV, from 40 μs to 100 μs, from 50 Hz to 200 Hz, from 0.1 Pa to 0.3 Pa and from 200 W to 400 W. The magnetic field can restrain the distribution of fluorocarbon radical in the chamber.

关 键 词：射频溅射 脉冲偏压 氟碳自由基 

分 类 号：TG174.444[金属学及工艺—金属表面处理]