芯片互连超声键合技术连接机制探讨  

Review of Ultrasonic Wire Bonding Mechanism in Chip Interconnection

作　　者：田艳红[1] 孔令超[1] 王春青[1] 

机构地区：[1]哈尔滨工业大学现代焊接生产技术国家重点实验室,黑龙江哈尔滨150001

出　　处：《电子工艺技术》2007年第1期1-5,9,共6页Electronics Process Technology

基　　金：哈尔滨工业大学优秀青年教师培养计划资助(项目编号:No.HIT.2006-01504489)

摘　　要：超声键合是实现集成电路封装中芯片互连的关键技术之一。对于超声键合过程焊点形成机理以及超声在键合过程中发挥的作用的正确理解是实现参数优化和获得可靠焊点的关键。综述了超声键合技术连接机理,归纳总结并探讨了四种键合机制,包括:摩擦生热键合理论、位错理论、滑动摩擦及变形理论和微滑移理论。Ultrasonic wire bonding is one of the most important technologies in chip interconnection of integrated circuits. Correct understanding on bonding mechanism and ultrasonic effect during ultrasonic bonding process is a major concern to get reliable bond and to optimize the process window. Ultrasonic wire bonding mechanisms were reviewed, and four mechanisms were summed up and discussed including heat based theory, dislocation theory, deformation theory and micro - slip theory.

关 键 词：超声键合 连接机理 芯片互连 

分 类 号：TN405[电子电信—微电子学与固体电子学]