直流辉光氧等离子体刻蚀金刚石膜的研究  

Research on etching of diamond films using DC glow oxygen plasma

作　　者：郑先锋[1] 马志斌[1] 张磊[1] 王传新[1] 满卫东[1] 汪建华[1] 

机构地区：[1]湖北省等离子体化学与新材料重点实验室武汉工程大学,湖北武汉430073

出　　处：《金刚石与磨料磨具工程》2007年第1期35-38,43,共5页Diamond & Abrasives Engineering

基　　金：湖北省科技攻关计划(2002AA105A02)

摘　　要：在直流辉光放电等离子体装置上,利用不同直流功率和工作气压下产生的氧等离子体对CVD金刚石厚膜的表面进行了刻蚀。利用扫描电子显微镜、Raman光谱和电子微量分析天平,分别对刻蚀前后金刚石膜表面的形貌、结构和刻蚀速率进行了观测。结果发现:在工作气压一定时,刻蚀速率随着直流功率的增加而增大,并且刻蚀由各向同性逐渐转变为各向异性。在直流功率一定时,工作气压的降低会导致刻蚀速率的增加,并且刻蚀由各向同性转变为各向异性。但过高的直流功率会导致金刚石膜表面沉积出无定形碳。基于实验研究结果和相关基本理论建立了刻蚀模型,并根据模型得到了影响刻蚀的主要原因在于等离子体中的电子温度和金刚石膜的悬浮鞘电位。Polycrystalline diamond films are etched at different etching parameters in oxygen plasma produced by DC slow discharge. The etched morphology, etching rate and the etched surface structure are respectively analyzed usirig scanning electron microscopy, electronic micro - balance and Raman spectroscopy. It is found that when the gas pressure remains, with the increasing of DCpower,rhe ething rate incrases remarkably and the etching transforms from isotropic to anisotropic.When remains the DC power,the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to ansotiopic etching.Further heightening the DC power can result in the formation of amorphous carbon on the surface.According to the basic theories,etching model is developed,and educed from this model the main influence mechanisms of etching are the tempatature of electrons and the floating sheathing voltage of diamond film.

关 键 词：金刚石膜 刻蚀 直流辉光放电薄 氧离子体 

分 类 号：TQ164[化学工程—高温制品工业]