BSIM SOI阈值电压模型参数的提取  

Parameters Extraction of Threshold Voltage Model of BSIM SOI

作　　者：李瑞贞[1] 李多力[1] 杜寰[1] 海潮和[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第1期33-36,共4页Chinese Journal of Electron Devices

摘　　要：阈值电压是MOSFET最重要的参数,阈值电压模型是MOSFET模型中最重要的部分.目前模型参数的提取主要通过商业软件来完成,商业软件由于价格昂贵以及内部机理的复杂性限制了它们的应用.本文提出了遗传算法和局部优化相结合来提取BSIMSOI阈值电压模型参数的方法,该方法简单易用,且具有较高的精确度,适合推广使用.Threshold voltage is the most important parameter of MOSFET. Threshold voltage model is the most important part of MOSFET model. Currently, the model parameters extraction is performed mainly through commercial software. The application of commercial software is confined because they are usually very expensive and their mechanism is too complex. A novel method combining genetic algorithm and local optimization is proposed in this paper to extract threshold voltage parameters of BSIM SOI. This method is simple and easy to use. And it has very good accuracy. It is convenient to apply to use.

关 键 词：SOI 参数提取 阈值电压 遗传算法 

分 类 号：TN386.1[电子电信—物理电子学]