功率半导体器件的场限环研究  

Research of FLR of Power Semiconductor Device

作　　者：遇寒[1] 沈克强[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2007年第1期210-214,共5页Chinese Journal of Electron Devices

摘　　要：分析了场限环结构原理,总结了影响击穿电压的相关因素.采用圆柱坐标对称解进行分析,讨论了给定击穿电压情况下场限环结构的电场分布和峰值电场表达式及各种确定场限环个数的方法的.最后用流行的2-D半导体器件模拟工具MEDICI对器件终端进行相关模拟,尤其是表面电荷对带场限环的击穿电压和优化环间距的影响做了大量的分析模拟.得出的结论与文献中的数值模拟结果相符合,对设计优化场限环有一定的指导性.The field limting ring （FLR） termination structure theory is analysed, the related factors that influence breakdown voltage are summarized. Based on the cylindrical symmertric solution , predicting the distribution of the ring ,voltage edge peak field and the various method how to make sure the number of FLR are also discussed. By using the popular 2-D semiconductor device simulator, device termination structure with FLR is simulated and analysed, especially the influence of surface charges on breakdown voltage and optimal spacing of ring to ring . The analytic conclusions and the simulated results reach a good agreement. Previous results is helpful to design and optimize the field limting ring （FLR） .

关 键 词：功率半导体 击穿电压 场限环 环间距MEDICI表面电荷 

分 类 号：TN323.4[电子电信—物理电子学]