固相外延CoSi_2薄膜作为扩散源形成n^+p浅结技术研究  

New n￣+p Shallow Junction Formation Method by Using Solid State Epitaxial CoSi_2 as Diffusion Source

作　　者：房华[1] 李炳宗[1] 吴卫军[1] 邵凯[1] 姜国宝[1] 顾志光[1] 黄维宁[1] 刘平[1] 周祖尧[1] 朱剑豪[1] 

机构地区：[1]复旦大学电子工程系,中国科学院上海冶金研究所离子束开放实验室,香港城市大学物理及材料科学系

出　　处：《Journal of Semiconductors》1996年第4期305-312,共8页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：通过Ａｓ＋离子注入到由ＴｉＮ／Ｃｏ／Ｔｉ／Ｓｉ多层结构因相反应得到的外延ＣｏＳｉ２层中，利用外延硅化物作为扩散源（ＥＳＡＤＳ），形成了０．１μｍ的浅ｎ＋ｐ结．研究了Ｃｏｓｉ２外延薄膜离子注入非晶化后的再结晶特性、注入杂质退火时的再分布特性和形成的ｎ＋ｐ浅结特性．实验结果表明：外延ＣｏＳｉ２层在非晶化后能有效地再结晶；Ａｓ原子在多晶ＣｏＳｉ２／Ｓｉ结构和单晶ＣｏＳｉ２／Ｓｉ结构中有着不同的再分布特性；同相应的以多晶ＣｏＳｉ２作为扩散源形成的结相比，以外延ＣｏＳｉ２作为扩散源形成的结反向漏电小１～２个数量级，并表现出优良的击穿特性．Abstract n+p shallow junction has been fabricated by a new Epitaxial Silicide as Diffusion Source(ESADS) process using implantation of As+ ions into epitaxial CoSi2 layer formed by solid state reaction of TiN/Co/Ti/Si multilayer. The characteristics of recrystallization of amorphized CoSi2 thin film,redistribution of, As atoms during post-implantation annealing and the formed shallow junction have been studied. Experimental results show that amorphized epitaxially grown CoSt, layer can be effectively recrystallized; arsenic atoms have different redistribution behavior in epitaxial CoSi2/Si structure and polycrystalline CoSi2/Si structure and that the junctions formed by arsenic diffusion from epitaxial CoSi2 exhibit better breakdown characteristic and lower reverse leakage current (about 1￣2 order of magnitude) than those from polycrystalline CoSi2.

关 键 词：CoSi薄膜 固相外延生长 n+p结 半导体材料 

分 类 号：TN304.055[电子电信—物理电子学]