低压MOVPE外延生长GaN膜的光致发光激发谱研究  

Investigation of Photoluminescence Excitation Spectra from GaN Films Grown by Low-Pressure MOVPE

作　　者：段家 张伯蕊[1] 秦国刚[1] 张国义[1] 童玉珍[1] 金泗轩[1] 杨志坚[1] 姚光庆[1] 

机构地区：[1]北京大学物理系,北京大学化学系

出　　处：《Journal of Semiconductors》1996年第8期637-640,共4页半导体学报（英文版）

摘　　要：对用低压ＭＯＶＰＥ法生长的非掺ＧａＮ外延膜，在其光致发光谱峰位３７０ｍｍ、５９０ｕｍ和７４０ｕｍ附近测量了光致发光激发（ＰＬＥ）谱．对于５９０ｕｍ和７４０ｕｍ附近的发光来说，各样品的ＰＬＥ峰都位于３６０ｕｍ处，而对于３７０ｕｍ发光来说，大部分样品ＰＬＥ峰位于２８０ｕｍ处，而有的样品却位于２６０与３００ｎｍ两个波长处，对这些结果进行了讨论．Abstract We have measured photoluminescence excitation (PLE) spectra for the light emissions of 370urn,590urn and around 740um from undoped GaN films grown by lowpressure MOVPE.For the 590urn and 740um emissions,the PLE peak of each sample issituated at 360um:However,for the 370um emission,the PLE peaks from most samples aresituated at 280um,but the double peaks at the wavelengths of 260 and 300um instead ofthe single peak of 280um in the PLE spectra are measured for certain GaN samples. Wehave discussed the results.

关 键 词：低压 MOVPE 外延生长 GaN膜 光致发光 激发谱 

分 类 号：TN304.23[电子电信—物理电子学]