用改进算法提取GaN HEMT小信号等效电路模型  

Extraction of GaN HEMT Small Signal Equivalent Circuit Model Using an Improved Algorithm

作　　者：朱磊[1] 尤焕成[1] 金香菊[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《微纳电子技术》2007年第3期120-124,共5页Micronanoelectronic Technology

摘　　要：基于GaNHEMT小信号等效电路模型参数的提取,针对扰动机制、退火方式、记忆功能、回火机制等关键点,提出了一种改进的模拟退火算法。用Matlab仿真工具实验证明,在5～15GHz之间基于S参数测试数据,选取16个频率参考点,利用改进算法返回等效电路的13个参数,与测试数据有良好的一致性,是一种快速的全局优化算法。An improved fast simulated annealing method was presented, which improved the disturbing mechanism, annealing method, memory function, backfire mechanism. The method presented here was successfully applied to the extraction of the parameters of a GaN HEMT small signal equivalent circuit model by Matlab simulation tool. The experiment shows that the 13 parameters of equivalent circuit model are rapidly extrated with 16 test data between the frequency of 5 GHz and 15 GHz, which are quite close to the test results. It＇s proved that the method is a fast global optimization.

关 键 词：GAN HEMT 小信号等效电路模型 模拟退火算法 参数提取 MATLAB 

分 类 号：TN302[电子电信—物理电子学]