圆片键合强度测试方法分析  

Measurement Research of Wafer Bonding Strength

作　　者：聂磊[1] 史铁林[1] 廖广兰[1] 汤自荣[2] 

机构地区：[1]华中科技大学机械学院,湖北武汉430074 [2]武汉国家光电实验室,湖北武汉430074

出　　处：《半导体光电》2007年第1期64-67,共4页Semiconductor Optoelectronics

基　　金：国家重大基础研究资助项目(2003CB716207);国家自然科学基金资助项目(50405033;50575078)

摘　　要：介绍了三种典型的圆片键合强度表现形式:抗拉强度、剪切强度和粘接强度。针对每种表现形式的特点,分析了相应的测试方法。抗拉和剪切强度以力为表征,主要的测试方法是一维直拉法,可测78.4 MPa强度以下的键合样件,但是测试样件制备要求比较严格;粘接强度是以能量形式表征键合强度,可以从本质上了解键合质量,主要测试方法是DCBT法。但是DCBT法需要精确计算所做的功,对测试设备要求较高。因此,抗拉和剪切强度主要应用于生产实际中而粘接强度侧重于科研工作。Three typical manifestations of wafer bonding strength were introduced as tensile strength,shear strength and adhesive strength.The test method for each kind of strength was analyzed and related application environment was expounded.Tensile and shear strength are characterized by the form of force and main test methods for them are straight pull test,by which samples with bonding strength lower than 78.4 MPa can be tested.But the criterion of test sample preparation is strict.While adhesive strength is characterized by the form of energy which discovered the essence of bonding and DCBT can be performed to acquire the value of adhesive strength. However the test setup for adhesive strength test is more complicated and accurate relatively. As a result, tensile and shear strength test are suitable for actual production and adhesive strength is applicable in scientific research.

关 键 词：圆片级封装 键合强度 测试 

分 类 号：TN432[电子电信—微电子学与固体电子学]