离子渗氮新技术的研究现状  

Review of Recently Developed Plasma Nitriding Technologies

作　　者：龙发进[1] 周祎[1] 康光宇[1] 李鑫鸿 耿漫[1] 

机构地区：[1]深圳国家863计划材料表面工程技术研究开发中心,广东深圳518029

出　　处：《热加工工艺》2007年第6期61-64,80,共5页Hot Working Technology

基　　金：广东省科技研究项目(2004B16001206)

摘　　要：为了克服传统离子渗氮的一些固有缺点,近些年来出现一些新的离子渗氮技术,如活性屏离子渗氮、等离子体源离子渗氮、离子注入离子渗氮等,本文简要介绍了这些新技术及其原理、特点,总结了这类技术的共性模型。其中,活性屏离子渗氮技术和等离子体源离子渗氮技术有着明显的设备和工艺优势,可能成为离子渗氮技术的发展方向。In order to overcome the inherent shortcomings of conventional plasma nitriding, new plasma nitriding technologies, such as active screen plasma nitriding, plasma source ion nitriding, ion implantation ion nitriding, were developed during recent years. The principles and characteristics of new technologies were introduced, and their same characteristic models in plasma nitriding were summatized. Active screen plasma nitriding and plasma source nitriding, which offer many advantages on equipments and techniques, will be the development direction in plasma nitriding technology field.

关 键 词：离子渗氮 活性屏 等离子体源 离子注入 

分 类 号：TG156.8[金属学及工艺—热处理]