多晶硅薄膜制备方法与压阻特性的研究  

Research on preparation and piezoresistive properties of poly silicon thin film

作　　者：刘晓为[1] 宋明浩[1] 王喜莲[1] 潘慧艳[1] 揣容岩[1] 

机构地区：[1]哈尔滨工业大学MEMS中心,黑龙江哈尔滨150001

出　　处：《传感器与微系统》2007年第4期18-20,共3页Transducer and Microsystem Technologies

摘　　要：对磁控溅射和低压化学气相淀积(LPCVD)2种方法制备的多晶硅薄膜的电学和压阻特性进行了研究,并讨论了结晶化工艺对磁控溅射薄膜性质的影响。实验表明:LPCVD薄膜稳定性、重复性较好,应变系数可达到20以上;磁控溅射薄膜经适当结晶化工艺处理具有纳晶硅的结构特征,应变系数可达到80以上。利用扫描电镜(SEM)图片结合电阻率和应变系数的测试结果,讨论了2种方法制备出的多晶硅薄膜应用于压阻式力学量传感器的可行性。The electricity and piezoresistive properties of the poly silicon films prepared by magnetron sputtering and low pressure chemical vapor deposition （LPCVD） are investigated,and also the irfluenee of the crystallizing process on the characteristics of magnetron sputtering film alos is discussed. The experimental results indicate that the poly silicon film prepared by LPCVD has good stability and repeatability, and the gauge coefficient is up to 20. Correspondingly, structural characteristics of nanoerystalline silicon are analyzed by studying the film prepared by magnetron sputtering after appropriate crystallizing process, and the film＇ s gauge coefficient is up to 80. With using-both the scanning electron microscope （ SEM） photographs and testing results of resistivity and gauge coefficient,the feasibility of the poly silicon films prepared by two different ways applied to mechanical quantity sensors is discussed.

关 键 词：磁控溅射 低压化学气相淀积 多晶硅薄膜 应变系数 压阻特性 

分 类 号：O738[理学—晶体学]