PECVD法氮化硅薄膜的研究  

The Studies of the Silicon Nitride Films Prepared by Plasma Enhanced Chemical Vapour Deposition(PECVD)

作　　者：吴大维[1] 范湘军[1] 郭怀喜[1] 张志宏[1] 李世宁 

机构地区：[1]武汉大学

出　　处：《材料科学与工程》1997年第1期46-49,共4页Materials Science and Engineering

摘　　要：本文采用射频等离子体增强化学气相生长法（ＰＥＣＶＤ），在单晶硅衬底上生长氮化硅薄膜，经Ｘ射线衍射测试发现，在（１００）晶向硅片上生长的氮化硅薄膜为（１０１）晶向的外延生长膜。还用红外吸收光谱拉曼光谱和Ｘ射线光电子能谱测试了β－Ｓｉ３Ｎ４的特性，讨论了它在微电子学中的应用。The silicon nitride films were deposited by plasma enhanced chemical vapour deposition.The result obtained by X ray diffraction indicated that the nitride silicon grew along(101) orientation on Si(100).In addition.The FTIR.Raman scattering and X ray photoelectron spectra were used to characterize silicon nitride. Its applications in microelectronics are also discussed.

关 键 词：PECVD 外延生长 氮化硅 薄膜 

分 类 号：TN304.24[电子电信—物理电子学] TN304.055