ZnSe(100)极性表面电子结构研究  

THE STUDY OF THE ELECTRONIC STRUCTURE OF ZnSe(100) POLAR SURFACE

作　　者：班大雁[1] 方容川[1] 李永平[1] 张海峰[2] 

机构地区：[1]中国科学技术大学物理系 [2]冶金工业部钢铁研究总院

出　　处：《物理学报》1997年第4期767-774,共8页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：从实验和理论方面研究了闪锌矿结构ＺｎＳｅ（１００）表面电子结构，讨论了ＺｎＳｅ（１００）无再构无弛豫理想表面及其ｃ（２×２）非二聚和二聚再构表面的结构稳定性，从中得到ＺｎＳｅ（１００）非二聚再构表面较理想表面和二聚再构表面稳定，支持了Ｆａｒｅｌ等的实验结果，分析了ＺｎＳｅ（１００）理想表面与非二聚再构表面表面电子态差别，并与同步辐射光电子能谱作了对比。By using the Linear Muffin Tin Orbital (LMTO) method and synchrotron radiation photoemission,the electronic structure and surface stability of ZnSe(100) nonreconstruction surface,c(2×2) undimerized and c(2×2) dimerized reconstruction surfaces have been theoretically and experimentally investigated.We find that ZnSe(100)c(2×2) undimerized surfaces is more stable than ZnSe(100) nonreconstruction surface and c(2×2) dimerized reconstruction surfaces, supporting the experimental results proposed by Farrell.Through discussing surface states,we have found the difference between ZnSe(100) reconstruction surface and c(2×2) undimerized surface. The theoretical result is in good agreement with the synchrotron radiation photoemission measurements.

关 键 词：半导体 极性 表面电子结构 Ⅱ-Ⅵ族 

分 类 号：TN304.22[电子电信—物理电子学] O471[理学—半导体物理]