微波放电法生长GaS薄膜的性质  

PROPERTIES OF GaS GROWN BY MICROWAVE GLOW DISCHARGE

作　　者：陈溪滢[1] 曹先安[1] 丁训民[1] 侯晓远[1] 陈良尧[2] 赵国庆 

机构地区：[1]复旦大学应用表面物理国家重点实验室 [2]复旦大学半导体物理实验室 [3]复旦大学物理二系

出　　处：《物理学报》1997年第4期826-832,共7页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：报道了微波放电法在ＧａＡｓ表面与Ａｌ金属片上生长ＧａＳ薄膜．用俄歇电子能谱（ＡＥＳ）和卢瑟福背散射能谱（ＲＢＳ）分析了薄膜的成分，Ｘ射线衍射测试了薄膜的结构．结果表明，微波放电法生长的ＧａＳ薄膜是属于六方晶系的多晶材料．此外。A novel passivation film on GaAs surface has been grown by microwave sulfur glow discharge technique.Auger electron spectroscopy and Rutherford back scattering measurements show that the film is mainly composed of sulfur and gallium,and atomic ratio of gallium to sulfur is about 1∶1.From X ray diffraction spectroscopy measurememt,GaS is identified to be hexagonal polycrystalline material.The refraction index and dielectric constant of GaS have also been determined.

关 键 词：硫化镓 薄膜生长 微波放电法 半导体 

分 类 号：TN304.055[电子电信—物理电子学] O484.1[理学—固体物理]