射频PECVD高速沉积微晶硅薄膜  

Growth of Microcrystalline Silicon Films by RF Plasma Enhanced Chemical Vapor Deposition

作　　者：杨根[1] 谷锦华[1] 卢景霄[1] 陈永生[1] 张丽伟[1] 吴芳[1] 汪昌州[1] 李红菊[1] 

机构地区：[1]郑州大学物理工程学院教育部材料物理重点实验室,郑州450052

出　　处：《真空科学与技术学报》2007年第3期250-253,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：本文采用射频等离子体增强化学气相沉积(RF-PECVD)技术高速沉积微晶硅薄膜。系统研究了射频功率、气体总流量、沉积气压、硅烷浓度等沉积参数对薄膜沉积速率和晶化率的影响。通过沉积参数的优化,使微晶硅薄膜沉积速率达到了3/s左右。Microcrystalline sihcon（μc-Si：H） films were grown by RF plasma enhanced chemical vapor deposition（PECVD）. The influence of various factors, including deposition pressure, RF power, gas flow rate, silane concentration etc., on the deposition rate and microstructures of the film was studied. High quality μc-Si： H films were grown at a deposition rate of 0.3 nm/s under the optimized growth conditions.

关 键 词：等离子体增强化学气相沉积 微晶硅薄膜 高压耗尽法 高速沉积 

分 类 号：O484[理学—固体物理]