ULSI制造中铜CMP抛光液的技术分析  

Technology Analysis on Copper CMP Slurry in ULSI Manufacturing

作　　者：李庆忠[1] 郭东明[1] 康仁科[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室

出　　处：《半导体技术》2007年第5期382-386,共5页Semiconductor Technology

基　　金：国家自然科学基金重大项目资助(50390061);中国博士后科学基金资助(20060390984)

摘　　要：对ULSI制造中的层间介质化学机械抛光的发展趋势和要求进行了讨论,分析了铜化学机械抛光的材料去除过程、影响因素和抛光液的重要作用,讨论了酸性和碱性两种铜抛光液的组成和一些组分的功能,对研究铜化学机械抛光的电化学手段进行了阐述和机理分析,指出了铜化学机械抛光今后的研究趋势和重点以及抛光液研究的发展方向。The development trend and demand of interlayer medium CMP were discussed. Material removal process and infection factor of copper CMP were analyzed, the important effect of slurry was also analyzed. Two kinds of acidity and alkalescence copper slurry were discussed on their Composing and some constituent functions. Electrochemistry means of copper CMP was expounded and analyzed. The research and development trends for copper CMP and the slurry were pointed out.

关 键 词：化学机械抛光 抛光液 铜 技术分析 

分 类 号：TN405[电子电信—微电子学与固体电子学]