渐进因子分析法及其在Au/Ni/Si薄膜俄歇深度剖面研究中的应用  

Evolving Factor Analysis and Its Application in AES Depth Profiling of Au/Ni/Si Film

作　　者：谢舒平[1] 杨得全[1] 范垂祯[1] 

机构地区：[1]中国空间技术研究院兰州物理研究所,兰州730000

出　　处：《真空科学与技术》1997年第1期26-33,共8页Vacuum Science and Technology

摘　　要：将渐进因子分析法应用于俄歇深度剖面的化学态研究。通过对Au／Ni／Si薄膜样品深度剖析过程的渐进因子分析，最终获得了各元素的化学状态和深度分布，并发现Au／Ni／Si样品中Ni／Si界面在室温下已发生反应，生成富Si的NixSi化合物层。样品经真空退火处理后，Ni／Si界面进一步反应生成Ni2Si合金，而原有的NixSi化合物含量相对减少，并向Si基体侧扩展，同时Ni穿透Au膜在样品表面富集。渐进因子分析的结果与XPS分析相一致。In this paper,it is firstly applied evolving factor analysis to study element'S chemical state during AES depth profiling. Using EFA for analyzing Au/Ni/Si film sample,we obtained all element's chemical states and their depth distributions ultimately,and discovered that Ni/Si interface had reacted and formed Sirich compound NixSi at room temPerature. After annealing,Ni/Si interface further reacted to form Ni2Si silicide,however the content of NixSi compound reduced and NixSi extended to Si substrate. At the same time,nickel passed through gold bulk and segregated on film surface. These EFA results coincide with XPSanalysis.

关 键 词：俄歇电子能谱 深度剖面 铜/铌/硅 薄膜 

分 类 号：O484.1[理学—固体物理]