一种新结构IGBT—内透明集电区IGBT  

A New Structure of IGBT

作　　者：李震[1] 胡冬青[1] 亢宝位[1] 

机构地区：[1]北京工业大学功率半导体器件与功率IC研究室

出　　处：《电力电子》2007年第2期36-38,35,共4页Power Electronics

基　　金：本研究获得国家自然科学基金资助;批准号60676049

摘　　要：本文对一种新的IGBT结构——"内透明集电区IGBT"(ITC-IGBT)进行了仿真研究。这种新结构的特点是在用外延片制造的传统的IGBT的P型集电区中距集电结很近的位置设置了一个具有极高过剩载流子复合速率的内部高复合层,同时适当降低高复合层以上P区掺杂浓度。仿真结果表明,无论是穿通型结构(有缓冲层)还是非穿通型结构(无缓冲层)的ITC-IGBT,在器件工作电流范围内都具有饱和电压正温度系数,解决了现有的用外延片制造的PT-IGBT所难以克服的饱和电压负温度系数的缺点,有利于IGBT的并联使用。对于1200V以下的IGBT,该新结构开辟了一种可以避免超薄片操作的简单的制造良好温度性能器件的途径。Simulations have been carried out for a new structure of insulated gate bipolar transistor （IGBT）Internally Transparent Collector （ITC） IGBT. Comparing with conventional PT- IGBT fabricated by epitaxial wafer, the new structure is characterized by implanting a P collector layer between the P＋ substrate and the N base and a local lifetime control layer near the interface of P＋ substrate and P collector layer . The electron-hole recombination velocity in the local lifetime control layer is very high so that the electrons from N base recombine almost fully with holes from P＋ substrate. The simulation results have shown that the temperature coefficient of the saturation voltage of ITC-IGBT, either punch-through （with buffer layer） or non-punch-through （without buffer layer）, is positive. It overcomes the drawback of the conventional epitaxial PT-IGBT, of which the temperature coefficient is negative. The positive temperature coefficient of saturation voltage is helpful for devices parallel connection. The new structure hews out a new path to fabricate IGBT with good temperature performance without ultra-thin wafer ofperation.

关 键 词：IGBT PT-IGBT NPT-IGBT 

分 类 号：TN322.8[电子电信—物理电子学]