热处理对硅片抗弯强度的影响  

EFFECT OF HEAT TREATMENT ON FLEXURE STRENGTH OF SILICON WAFER

作　　者：谢书银[1] 石志仪[1] 李冀东[1] 董萍 

机构地区：[1]中南工业大学应用物理及热能工程系

出　　处：《中国有色金属学报》1997年第1期169-171,共3页The Chinese Journal of Nonferrous Metals

基　　金：国家教委硅材料国家重点实验室基金

摘　　要：研究了热处理温度、时间及降温方式对不同氧、氮含量的氩气氛直拉硅（ＡＣＺ）及氮气氛直拉硅（ＮＣＺ）抗弯强度（σ）的影响规律。结果表明：硅氧络合物和氮硅氧络合物的生成使抗弯强度提高，沉淀的形成使强度下降。提出了既能消除热施主。The effects of heat treatment temperature, time and cooling way on the flexure strength of ACZ and NCZ silicon wafers with various contents of oxygen and nitrogen were studied. The strength of silicon wafer was increased by the formation of silicon oxygen and nitrogen silicon oxygen complexes and was decreased by the formation of silicon oxygen and nitrogen silicon oxygen precipitates. A new two step cooling technique eliminating heat donor and preventing the decrease of strength was suggested.

关 键 词：硅 抗弯强度 热处理 硅片 单晶硅 

分 类 号：TN304.12[电子电信—物理电子学] TM242.051[一般工业技术—材料科学与工程]