几种常用光学材料的离子束刻蚀特性研究  

Characteristics of several common optical materials in ion beam etching

作　　者：刘颖[1] 徐德权[1] 徐向东[1] 周小为[1] 洪义麟[1] 付绍军[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029

出　　处：《中国科学技术大学学报》2007年第4期536-538,553,共4页JUSTC

基　　金：中国高技术研究发展(863)计划(863-804)资助

摘　　要：利用基于射频离子源的离子束刻蚀装置,分别以氩气、三氟甲烷为工作气体,初步研究了离子能量、束流和加速电压等条件对K9、石英、氧化硅薄膜、氧化铪薄膜这4种常用光学材料和光刻胶的离子束刻蚀特性和反应离子束刻蚀特性的影响.实验结果表明:以三氟甲烷为工作气体的反应离子束刻蚀,在较低离子能量、束流和加速电压的条件下,就可对氧化硅薄膜和氧化铪薄膜实现较高的刻蚀选择比(分别为2.5∶1和1∶1).并在此基础上,研制出亚微米周期的氧化硅光栅和氧化铪光栅,其中氧化硅光栅线条的侧壁倾角大于85°;氧化铪光栅在1064 nm自准直入射角下的负一级衍射效率高于95%.Ion beam etching （IBE） and reactive ion beam etching （RIBE） of several common optical materials were performed using an RF ion source. Two types of operation gas, Ar and CHF3, were used respectively. The IBE and RIBE characteristics of photoresist and several optical materials such as K9, quartz, silicon oxide film and hafnium oxide film were investigated under different etching conditions including the energy and ion beam current and acceleration voltage. The experiment results suggest that the reactive ion beam etching using CHF3 will get high etching selectivity （2.5：1 of silicon oxide film and 1 ： 1 of hafnium oxide film） under low ion energy and ion beam current and low accelerate voltage. Based on the results, silicon oxide and hafnium oxide gratings with submicron period were fabricated by means of this equipment. The side obliquity of silicon oxide dielectric grating line is greater than 85°, and the -1st order diffractive efficiency of the hafnium oxide grating is more than 95% at 1 064 collimation condition.

关 键 词：离子束刻蚀 射频离子源 选择比 衍射光学元件 

分 类 号：O436.1[机械工程—光学工程]