ZnO薄膜p型掺杂的研究进展  

Recent Research Progress in p-type Doping of ZnO Thin Film

作　　者：李驰平[1] 张铭[1] 宋雪梅[1] 王波[1] 李彤[1] 严辉[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《材料导报》2007年第F05期297-300,共4页Materials Reports

基　　金：国家自然科学基金(20021003);国家自然科学基金(60576012);科技部重大基础前期专项(2002CCC01300);北京市优秀人才工程(20041D0501513)

摘　　要：ZnO薄膜作为一种多功能半导体材料,近年来一直受到广泛关注。然而,如何制备高质量的p型ZnO薄膜是实现其实用化的关键。概括了p型掺杂困难的原因,并指出Ⅲ-Ⅴ族元素共掺杂可能是p型掺杂的最好方法。简单回顾了ZnO薄膜p型掺杂的研究现状,并对今后的发展趋势进行了展望。As a multifunctional semiconductor material, ZnO film has attracted much attention recently. However, how to prepare high-quality p type ZnO film is the key step for its applications. The reason for the difficulties of p-type doping is summarized and the co-doping method is mentioned as the possible best way of p-type doping. A brief review of the recent advances in p-type ZnO thin film is provided in the paper, and some problems to be solved by further research are also proposed.

关 键 词：ZNO薄膜 P型掺杂 共掺杂方法 

分 类 号：TN304.21[电子电信—物理电子学]