Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果  

New Results of nc-Si: H Films Prepared by Hydrogen Diluted Silane in Triode PECVD System

作　　者：秦华[1] 陈坤基[1] 黄信凡[1] 李伟[1] 

机构地区：[1]南京大学物理系,南京210008

出　　处：《Journal of Semiconductors》1997年第2期103-107,共5页半导体学报（英文版）

摘　　要：采用三极管型等离子体增强化学汽相淀积（TriodePECVD）系统，适当选取硅烷（SiH4）和氢气（H2）流量比制备纳米硅（nc-Si：H）薄膜．保持栅极偏压为－100V，改变SiH4、H2流量比可以得到薄膜从非晶硅（a－Si：H）到nc－Si：H的结构转变，其氢气流量比例[H2]／（[H2]＋[SiH4]）的阈值为93．3％．随着流量比进一步增大，晶化比例从12％增大至50％，但晶粒尺寸基本保持不变，nc－Si晶粒的平均尺寸约2．5nm，这是不同于常规二极管PECVD、氢稀释制备的nc－Si：H薄膜的新结果，并从实验上验证了电导率和电子迁移率的渗流现象．Nanocrystalline silicon (nc-Si: H) films have been prepared in triode PECVD system with a hydrogen-diluted silane plasma. The transition from a-Si: H to nc-Si: H was also obtained by varying the ratio of H2 to SiH4 while the bias of the grid electrode was fixed at - 100V in respect to the substrate. The threshold value of [H2]/([H2]+ [SiH4]) is about 93. 3%. The average grain size of nc-Si: H is about 2. 5um. During the increase of [H2]/([H2]+ [SiH4]) the volume fraction of crystallinity in nc-Si: H ranged from 12% to 50% while the average grain size was kept constant. This is quite different from structures of samples prepared by the conventional diode PECVD with H2 dilution. The travelling wave technique was applied to study the transport properties of nc--Si: H films,and experimental results confirmed the percolation phenomena of the transport in nc--Si: H films.

关 键 词：纳米硅薄膜 三极管型 TRIODE PECVD 

分 类 号：TN304.12[电子电信—物理电子学] TN304.055