808nm GaAs/AlGaAs大功率半导体激光器波长的影响因素及控制  

Influential Factors and Control of Wavelength of 808um GaAs/AlGaAs High Power Laser Diode

作　　者：朱东海[1] 梁基本[1] 徐波 朱战萍[1] 张隽[1] 龚谦[1] 李胜英 王占国[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1997年第2期108-112,共5页半导体学报（英文版）

摘　　要：通过对影响GaAs／AlGaAs激光器波长的各种因素的分析讨论与实验研究，制备了性能优良的808umGaAs／AlGaAs大功率激光器材料．应用此材料制作的激光器的结果表明，器件室温连续输出功率1W时，激射波长仍可保持在808nm附近，器件的室温连续输出功率已达2．3W．The comprehensive analysis and experimental study on the factors in fluencing the wavelength result in the fabrication of high quality 808um GaAs/AlGaAs High Power Laser diode materials and achievements of the precise control of the wavelength. The performance of the device shows that the wavelength remains around 808um when the room temperature continuous wave output power is up to 1W. The recorded output power hasreached 2. 3W.

关 键 词：量子阱 半导体激光器 砷化镓 ALGAAS 激射波长 

分 类 号：TN248.4[电子电信—物理电子学]