C^+注入硅形成β-SiC埋层研究  

Ion Beam Synthesis of β-SiC Buried Layer

作　　者：陈长清[1] 杨立新[1] 严金龙[1] 陈学良 

机构地区：[1]中国科学院上海冶金所微电子学分部,上海200233

出　　处：《Journal of Semiconductors》1997年第2期140-145,共6页半导体学报（英文版）

基　　金：上海一美国应用材料研究与发展基金

摘　　要：在200℃和680℃下对P型（100）单晶硅进行不同剂量的C+注入，实验表明680℃下注入形成的β-SiC埋层存在＜100＞取向生长的结晶态，经过1160℃氮气氛4小时或8小时退火后，结晶度得到进一步增强；200℃下注入形成的β-SiC埋层为无定形态，即使经过1160℃氮气氛4小时或8小时退火之后仍没有发现结晶态衍射峰存在．研究同时揭示了不同C+注入剂量对所形成β-SiC埋层结晶程度的影响，以及不同退火工艺对于样品制备的影响．通过AES成分深度测试及剖面透射电子显微镜（XTEM）可以直观分析β-SiC埋层的内在结构．P-type (100) Si wafers were implanted with 60keV ions at different temperatures (200℃, 68℃ ) with doses of 2 ×10'17 cm-2 6 × 1017 cm-2 9 ×10'17 cm-2. The analyses performed showed a strong dependence of β-SiC buried layer structual features on the implantation and annealing parameters. Implanting at 680℃, there are two apparent XRD peaks due to the β-SiC (200) and (400) reflections in as-implanted samples, The quality of β-SiC grains is greatly improved after annealing at 1160℃ for 4 hours or 8 hours. However implanting at 200℃ even through annealing at 1160℃ for 8 hours, the buried layer is still amorphous. The relation between the microstructure of β-SiC buried layer and the doses of implantation are also reported. FTIR,XRD,AES and XTEM are used to characterize the buried layer. In order to form an epitaxial layer, we believe that the key is to preserve the matrix lattice during implantation by increasing the substrate temperature.

关 键 词：碳化硅 埋层 注入 

分 类 号：TN304.24[电子电信—物理电子学]