CO_2离化团束对Si基板表面的辐照效应  

Irradiation Effects of CO_2 Cluster Ion Beam on Surface of Si Substrate

作　　者：田民波[1] 山田公[2] 

机构地区：[1]清华大学材料科学与工程系,北京100084 [2]日本京都大学离子工学实验室

出　　处：《Journal of Semiconductors》1997年第4期275-280,共6页半导体学报（英文版）

摘　　要：利用RBS和椭圆仪分析对CO2离化团束引起的硅表面的损伤进行了研究．实验发现，采用大尺寸团束照射，损伤程度小而且损伤层薄；团束尺寸越大，越容易形成低损伤的氧化层；随剂量增大，损伤部分发生氧化的比例增加，而且在单晶Si基板上经过极薄的过渡区形成氧化层．Damage effects of CO2 cluster ion beam on Si substrate were studied by RBS and ellipsometry. It is found by experiments that for impact with big size clusters, the damage degree is slighter and the damage layer is shallower. The bigger the cluster size, the easier to form the lower damage oxide layer. With increase of dose, a thicker oxide layer from demage region is formed, at the same time a thinner and more abrupt transition appears between oxidized layer and the underlying crystalline Si.

关 键 词：二氧化碳 气体离化团束 硅 辐照效应 

分 类 号：TN304.12[电子电信—物理电子学] TN304.055