NMOS晶体管高剂量率下总剂量辐照特性研究  

Total Dose Effects with High Dose Rate in NMOS Transistors

作　　者：李冬梅[1] 王志华[2] 皇甫丽英[1] 勾秋静[1] 雷有华[1] 李国林[1] 

机构地区：[1]清华大学电子工程系,北京100084 [2]清华大学微电子学研究所,北京100084

出　　处：《电子器件》2007年第3期748-751,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60372021/F010204)

摘　　要：采用商用标准0.6μm体硅CMOS工艺设计了不同宽长比、不同沟道长度及不同版图结构的非加固型NMOS晶体管作为测试样品.经高剂量60Coγ射线的总剂量辐照实验,讨论其在不同栅源偏置电压下的总剂量辐照特性.研究表明NMOS总剂量效应对辐照时栅源偏置电压敏感;辐照引起阈值电压的漂移随W/L的变化不明显;沟道长度及版图结构对NMOS管辐照后的源漏极间泄漏电流的影响显著.The test chips were designed and processed in a commercial 0. 6 μm standard CMOS/Bulk process. Device parameters were monitored before and after irradiation with about 9.5 kGy（Si）^60Co γ-rays. Comparisons of the effects with different device sizes and different layout structures were made. The effects of different biasing conditions during irradiation are discussed. The experiment results show that W/L does not change the threshold voltage shift after γ-ray irradiation. Channel length and layout structure enormously influence the leakage between source and drain induced by irradiation.

关 键 词：NMOS晶体管 辐照效应 总剂量 

分 类 号：TN386.2[电子电信—物理电子学]