PDSOI静态随机存储器的总剂量辐照加固  

Total Dose Resistance in PDSOI SRAM

作　　者：郭天雷[1] 韩郑生[1] 海潮和[1] 周小茵[1] 李多力[1] 赵立新[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第3期794-798,共5页Chinese Journal of Electron Devices

摘　　要：对PDSOI CMOS器件及电路进行总剂量辐照的加固势必会引起其性能下降,这就需要在器件及电路加固和其性能之间进行折中.从工艺集成的角度,对PDSOI CMOS器件和电路的总剂量辐照敏感区域:正栅氧化层、场区氧化层及埋氧层提出了折中的方法.采用此种方法研制了抗总剂量辐照PDSOI SRAM,进行总剂量为2×105rad(Si)的辐照后SRAM的各项功能测试均通过,静态电流的变化满足设计要求,取数时间:辐照前为26.3ns;辐照后仅为26.7ns.For PDSOI CMOS devices and circuits, the total dose radiation-hardened technology will reduce their performances. So there exists the trade-off between hardness and performance in order to optimize the hardened processes. From process integration angle, the oxide layer of top-gate, field and back-gate , which influence the performances of radiation-hardened PDSOI CMOSFETs and circuits , put forward the technology of total dose hardness. PDSOI SRAM were fabricated using radiation-hardened process, which are under total dose radiation test. After total dose radiation 2×10^5 rad（si）, every function of SRAM has passed the test, radiation-induced change of static current satisfies the design requirement. Before radiation the read time is 26.3 ns, after radiation the read time is only 26.7 ns.

关 键 词：总剂量辐照 静态随机存储器 工艺集成 加固 

分 类 号：TN47[电子电信—微电子学与固体电子学]