SiGe和SiGeC HBT速度过冲模型  

Velocity Overshoot Model of SiGe and SiGeC HBT's

作　　者：蔡瑞仁[1] 李垚[1] 

机构地区：[1]中国科学技术大学物理系微电子实验室,安徽合肥230026

出　　处：《微电子学》2007年第3期316-319,共4页Microelectronics

摘　　要：建立了超薄基区Si Ge和Si GeC HBT的速度过冲模型。通过求解能量平衡方程,得到电子温度分布,B-C结附近的电子温度远高于晶格温度。Ge的分布对Si Ge BHT速度分布影响很大,对于线性分布,Ge梯度越大,速度过冲越明显;Ge梯度一样时,线性分布比梯形分布的速度大。梯形分布的Si Ge HBT基区也发生速度过冲。Si GeC HBT速度过冲现象与Si Ge HBT相似。A velocity overshoot model of ultra-thin-base SiGe and SiGeC HBT＇s is obtained. By deriving Boltzmann electron temperature equation, 3000 K maxima near collector-base junction of temperatures are found. Velocity distribution solutions considering velocity overshoot are achieved. It is concluded that different germanium content percentage determines the maxima of overshoot velocities. Base overshoot are observed, and SiGeC HBT possesses similar velocities as SiGe HBT does.

关 键 词：速度过冲 电子温度 SIGE HBT SIGEC HBT 

分 类 号：TN304.26[电子电信—物理电子学]