微波法大功率稳定快速沉积CVD金刚石膜  

Steady and rapid deposite CVD diamond films under high-power using microwave

作　　者：黄建良[1] 汪建华[1] 

机构地区：[1]武汉工程大学等离子体化学与新材料省重点实验室,湖北武汉430074

出　　处：《武汉工程大学学报》2007年第4期63-66,共4页Journal of Wuhan Institute of Technology

基　　金：国家863计划资助项目(715-002-0020)

摘　　要：为了提高微波等离子体化学气相沉积CVD金刚石膜的速率,通过对微波源的磁控管、装置的冷却系统及真空密封技术三方面的改进,当微波频率为2.45 GHz、输出有效功率为6.0 kW以上时,装置能够长期稳定地运行;并在微波输入功率4.5 kW、CH4质量分数1.2%、气体流量150 SCCM、沉积气压9.5 kPa、基片温度(900±10)°C、沉积时间240 h的沉积工艺条件下(衬底上加上-150 V偏压),成功地在硅片上快速沉积出了厚度为500μm的金刚石厚膜,平均沉积速率为2.1μm/h,沉积膜的拉曼光谱图和SEM照片表明沉积出金刚石膜的质量很好.To advance the speed of preparating CVD diamond films by microwave plasma chemical vapor deposition, magnetron of microwave power supply, cooling system of apparatus as well as technique on vacuum and airproof are adopted. When frequency is 2.45 GHz and effective power is above 6.0 kW, apparatus can steadily run for long. Besides when input power 4.5 kW,quality fraction of CH4 1.2% ,gas flux 150 SCCM,air pressure 9. 5 kPa, temperature （900±10）℃, depositing 240 h, with negative bias voltage 150 V on underlay,the thickness of diamond films triumphantly rapidly grown on silicon is 500μm and the average speed of deposition is 2. 1 μm/h. Raman spectrum and scanning electron microscopy （SEM） analyses show that the quality of diamond films grown under above condition is fine.

关 键 词：金刚石膜 微波 化学气相沉积 装置 磁控管 

分 类 号：TB43[一般工业技术] TP271[自动化与计算机技术—检测技术与自动化装置]