PECVD中电子能量状态对氮化硅薄膜应力的影响  

Influences of Electron Energy Stateon the Residual Stress of Silicon Nitride Thin Films Deposited by PECVD

作　　者：杨景超[1] 赵钢[1] 邬玉亭[1] 

机构地区：[1]中国科学技术大学 精密机械与精密仪器系,安徽合肥230027

出　　处：《新技术新工艺》2007年第7期102-104,共3页New Technology & New Process

摘　　要：研究了平板电容式PECVD设备中电子能量状态对氮化硅薄膜应力的影响。通过改变沉积工艺参数,研究了射频功率、载气体分压比和反应压强与电子能量状态之间的联系及电子能量状态变化对氮化硅薄膜应力的影响。最终制备出了应力只有-182.4 MPa的低应力氮化硅薄膜。The paper presents the influences of electron ener- gy state between two plane-parallel electrodes of PECVD e- quipment to the residual stress of silicon nitride thin films.A serial of detailed experiments were carried out,which mainly discussed how the experiment parameters,such as RF pow- er,flux of dilution gas and pressure,influence electron energy state,and how electron energy state influence the residual stress of silicon nitride films on silicon substrate.Finally,the low stress of silicon nitride thin film with-182.4Mpa were deposited by PECVD.

关 键 词：PECVD 氮化硅 应力 电子能量 

分 类 号：TB43[一般工业技术]