内匹配型Ku波段8W功率器件  

Ku-Band 8 W Internally-Matched Power Device

作　　者：吴小帅[1] 杨瑞霞[1] 何大伟[2] 邱旭[2] 杨克武[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子器件》2007年第4期1252-1254,共3页Chinese Journal of Electron Devices

摘　　要：已成功研制出总栅宽为6.4 mm,栅长为0.35μm的GaAs功率PHEMT,其中对器件结构、栅挖槽等工艺进行了改进.两管芯合成的内匹配器件当Vds=8 V,输入功率Pin=32 dBm时,在f=14.0-14.5 GHz频段内,输出功率Po≥39.18dBm,功率增益Gp〉7 dB,功率附加效率[PAE]〉30%,两管芯合成效率大于88%,其中在14.1 GHz频率点,输出功率达到39.43 dBm,增益7.43 dB.The 6. 4 mm gate-width and 0. 35 μm improving the processes of device structure and gate-length GaAs power PHEMT has been fabricated by gate recess etching. The internally matched device with two chips demonstrates output power more than 39. 18 dBm with more than 7 dB power gain, more than 30 PAE and more than 88% co-efficiency across the band of 14.0～14.5 GHz with Vds=8 V and Pin=32 dBm. At 14. 1 GHz, the output power 39.43 dBm and power gain 7. 43 dB has been reached.

关 键 词：器件 内匹配 PHEMT 栅挖槽 

分 类 号：TN385[电子电信—物理电子学]