叠加能量C^+注入SiO_2薄膜的光致发光特性  

PHOTOLUMINESCENCE PROPERTIES OF MULTIPLE-ENERGY C + IMPLANTED SiO 2 FILMS

作　　者：赵俊[1] 杨根庆[1] 江炳尧[1] 林梓鑫[1] 周祖尧[1] 柳襄怀[1] 

机构地区：[1]中国科学院上海冶金研究所离子束开放实验室

出　　处：《功能材料与器件学报》1997年第1期12-16,共5页Journal of Functional Materials and Devices

摘　　要：首次采用叠加能量离子注入技术制备Ｃ＋注入ＳｉＯ２薄膜样品，室温下观测到很强的蓝光发射。通过测量样品的光致发光（ＰＬ）谱对退火条件的依赖关系，研究了样品的发光特性。对发光机制进行了初步探讨。C + implanted SiO 2 film samples fabricated by multiple-energy implantation technique were reported for the first time Strong blue emission from the samples were measured at room temperature The photoluminescence (PL) of the samples were studied via the relationship between the annealing conditions and the PL spectra The mechanism of the PL was discussed

关 键 词：离子注入 发光材料 二氧化硅 薄膜 光致发光 

分 类 号：O484.41[理学—固体物理]