Si基外延GaN的结构和力学性能  

Study on structure and mechanical properties of GaN epitaxy films grown on Si by MOCVD

作　　者：魏同波[1] 王军喜[1] 刘喆[1] 李晋闽[1] 

机构地区：[1]中科院半导体研究所,北京100083

出　　处：《材料研究学报》2007年第4期409-413,共5页Chinese Journal of Materials Research

基　　金：国家八六三高技术2006AA03A111资助项目.~~

摘　　要：采用MOCVD技术在Si村底〈111〉面上生长了GaN外延膜,分析了薄膜表面形貌和Si基GaN的临界载荷,研究了表面发光性能和GaN晶体质量随深度的变化.结果表明,外延层的表面比较平整,多组超品格插入层可以进一步降低位错密度,提高晶体质量.膜的表面有许多颗粒状的发光中心,除了强的带边峰外,还有弱的黄光带和红光带,这可能是O_N与V_(Ga)所产生的深能级跃迁产生的.GaN的晶体质量具有梯度变化,GaN外延层的上层晶体质量比较好,界面附近比较差,但是外延层与衬底的结合强度较高,临界载荷达到2.05N.GaN epitaxy films were grown on （111） oriented Si substrate by metal-organic vapor deposition（MOCVD）. The surface morphology, optical property, crystal quality from surface to interface and mechanical property of GaN grown on Si substrate were analyzed. It was found the surface of GaN film was smooth, and several groups multilayered AIN/GaN superlattice and GaN as composite intermediate layers acquired higher quality GaN epitaxy layer with low dislocation density. Many spots were distributed with a separation between 0.3 and 1.5 pm on the GaN surface. Weak yellow band and red band also appeared except for strong band edge emission, which may be correlated with oxygen impurity and assigned to donor-acceptor pair transition involving the deep ON donor and the shallow Voa acceptor. Crystal ability of upper eitaxy layer was highly superior to the zone near the interface. Although GaN film was suffered from greater strain stress, the adhesion strength of it to substrate was high and the critical load reached 2.05 N.

关 键 词：无机非金属材料 GAN CL RBS/沟道 临界载荷 

分 类 号：TN304[电子电信—物理电子学]