一种PN结隔离互补双极工艺  

Complementary Bipolar Process Based on P-N Junction Isolation

作　　者：欧宏旗[1] 刘伦才[1] 胡明雨[1] 税国华[1] 

机构地区：[1]模拟集成电路国家重点实验室

出　　处：《微电子学》2007年第4期548-552,共5页Microelectronics

摘　　要：介绍了几种互补双极工艺的结构和特点,详细阐述了一种基于N型外延的PN结隔离互补双极工艺;着重探讨了隔离制作技术和PNP管设计要点,并对实际流片结果进行了讨论。A number of complementary bipolar process technologies are introduced, together with their features and advantages. A p-n junction isolated complementary bipolar technology based on N-type epitaxial wafers is described in detail. Essentials of the isolation control and PNP transistor design are investigated in particular. And finally, discussions are made on results from processed wafers.

关 键 词：互补双极工艺 隔离技术 PNP晶体管 高速放大器 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]