蓝宝石衬底上生长AlGaN/AlN结构的应变分析  

Analysis of Strain on AlGaN/AlN Structures Grown on Sapphire Substrates

作　　者：梁栋[1] 袁凤坡[1] 张宝顺[2] 尹甲运[1] 刘波[1] 冯志宏[1] 

机构地区：[1]中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄050051 [2]长春理工大学高功率半导体激光器国家重点实验室,长春130022

出　　处：《半导体技术》2007年第9期765-767,共3页Semiconductor Technology

摘　　要：采用低温和高温AlN复合缓冲层的方法在蓝宝石衬底上外延生长AlGaN/AlN结构,并进行了应变分析。通过X射线双晶衍射ω-2θ扫描曲线和拟合曲线分析发现,AlN是由两个不同弛豫度的应变缓冲层组成,弛豫度分别为96%和97.2%。AlN缓冲层在低温下不完全弛豫,导致高温下存在一个继续弛豫过程。X射线双晶衍射和透射光谱分析发现,AlGaN层Al组分由于未知的AlGaN弛豫度而无法确定。对AlGaN带隙公式和实验结果进行拟合,推算出弯曲系数为1.05 eV,这与已有文献相吻合。The strain of AlGaN/AlN layer grown on sapphire substrates were heterostructures with low and high temperature AlN composite buffer analyzed. By high-resolution X-ray double-crystal diffraction, the AlN buffer layer was composed of two different strain layers, with the relaxation of 96% and 97.2%, respectively. The initial AlN buffer layer relaxed incompletely under low temperature, leading to further relaxation at higher temperature. By X-ray double-crystal diffraction and the transmission spectrum, it was found that the Al composition of the AlGaN layer was unable to be determined, as a result of the unknown AlGaN relaxation. By fitting the AlGaN band gap equation and the experimental values, the bowing factor was around 1.05 eV, which was consisted with the reported literatures.

关 键 词：AlGaN/AlN 应变 弛豫 弯曲系数 

分 类 号：TN304.054[电子电信—物理电子学]