InGaAs/GaAs量子点阵列中的能级计算  

Calculation of energy levels in InGaAs/GaAs quantum dot array

作　　者：杨晓杰[1] 王青[1] 马文全[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所纳米光电子实验室,北京100083

出　　处：《物理学报》2007年第9期5429-5435,共7页Acta Physica Sinica

基　　金：中国航天科工集团三院科技创新基金(批准号:HT3Y83582005)资助的课题.~~

摘　　要：根据八带k.p理论,在三维InGaAs/GaAs量子点阵列中求解kx=ky=kz=0处的有效质量哈密顿H0的本征值,得到InGaAs量子点中导带中电子基态EC1,第一激发态EC2和重空穴态EHH1的能级.随着In组分从30%增加100%,InGaAs量子点中EC2到EC1的带内跃迁波长从18.50μm蓝移到11.87μm,而EC1到EHH1的跃迁波长则从1.04μm红移到1.73μm;随着量子点高度从1.0nm增加到5.0nm,In0.5Ga0.5As和InAs量子点中EC1到EC2的带内跃迁都从束缚态-连续态型转换到束缚态-束缚态型,对应于两种量子点的带内跃迁波长分别从8.12μm(5.90μm)红移到53.47μm(31.87μm),两种量子点中EC1到EHH1的跃迁波长分别从1.13μm(1.60μm)红移到1.27μm(2.01μm).The subbands of the ground state E C1 , the first excited state E C2 and heavy hole state E HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H0 which is derived from eight-band k·p theory and the calculations are performed at kx=ky=kz=0 for the three-dimensional array of InGaAs/GaAs quantum dots （QDs）. With indium content in InGaAs QDs gradually increasing from 30% to 100%, the intersubband transition wavelength of E C2 to E C1 blue-shifts from 18.50 to 11.87 μm,while the transition wavelength of E C1 to E HH1 red-shifts from 1.04 to 1.73 μm. With the sizes of In 0.5 Ga 0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E C1 to E C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 μm （5.90 μm） to 53.47 μm （31.87 μm）, respectively, and the transition wavelengths of E C1 to E HH1 red-shift from 1.13 μm （1.60 μm） to 1.27 μm （2.01 μm）, respectively.

关 键 词：INGAAS 量子点 带内跃迁 八带k·p理论 

分 类 号：O471[理学—半导体物理]