中频磁控溅射钛酸锶钡薄膜的结构及性能  

The Structure and Properties of Barium Strontium Titanate Films Prepared by Medium Frequency Magnetron Sputtering

作　　者：廖家轩[1] 李恩求[1] 田忠[1] 许江[1] 杨海光[1] 

机构地区：[1]电子科技大学电子科学技术研究院,四川成都610054

出　　处：《稀有金属材料与工程》2007年第A01期970-972,共3页Rare Metal Materials and Engineering

基　　金：教育部高等学校博士点专项基金(20060614021);国防预研基金(9140A10030606);电子科技大学青年基金(L08010301JX05016)

摘　　要：用中频磁控溅射制备了钛酸锶钡Ba0.6Sr0.4TiO3(简称MF-BST)薄膜,并对该薄膜进行原位晶化。XPS表明,MF-BST薄膜的表面成分Ba0.58Sr0.42Ti1.01O2.95和膜体成分Ba0.6Sr0.4TiO3接近,主要由钙钛矿结构的BST组成。AFM表明,MF-BST薄膜的表面光滑致密。XRD表明,MF-BST薄膜晶化完全,呈(111)择优。XTEM观察及XPS刻蚀表明MF-BST/Pt界面过渡层约2nm厚,含少量的TixPtyOz。MF-BST薄膜电容器具有高达1200的介电常数及低达10-9A/cm2的漏电流密度。同时,该薄膜的结构及介电性能与射频磁控溅射及非原位晶化的Ba0.6Sr0.4TiO3(简称RF-BST)薄膜进行了比较。Ba0.6Sr0.4TiO3 films have been prepared by medium frequency magnetron sputtering, and crystallized in situ. The films are denoted as MF-BST films. XPS shows that the film surface composition and structure is Ba0.58Sr0.42Ti1.01O2.95, and mainly composed of perovskited BST phase. XRD exhibits that the BST films can be fully crystallized and shown preferential （111） orientation. Meanwhile, the film shows about 2 nm thick BST/Pt transition layer which contains a small amount of non-perovskited BST phase with a little TixPtyOz compound. AFM shows that the BST films are smooth and compact, which can prevent the adsorbed C/H contaminations from diffusing into two sides further, resulting in thin transition layer with a small quantity of non-perovskited BST phase. The film capacitor displays about 1200 dielectric constant and 10-9 A/cm^2 level leakage current density. Compared to the BST films prepared by radio frequency magnetron sputtering and crystallized not-in situ, the MF-BST films exhibit more significant improvement both in structure and in dielectric property.

关 键 词：中频磁控溅射 钛酸锶钡薄膜 钙钛矿结构 

分 类 号：TB383.2[一般工业技术—材料科学与工程]