基于MOCVD技术的长波AlGaAs/GaAs量子阱红外焦平面探测器  

AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology

作　　者：李献杰[1] 刘英斌[1] 冯震[1] 过帆[1] 赵永林[1] 赵润[1] 周瑞[1] 娄辰[1] 张世祖[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《红外与激光工程》2007年第4期435-438,共4页Infrared and Laser Engineering

基　　金：电子支撑基金资助项目(41501070402)

摘　　要：采用n型掺杂背面入射AlGaAs/GaAs量子阱结构,用MOCVD外延生长和GaAs集成电路工艺,设计制作了大面积AlGaAs/GaAs QWIP单元测试器件和128×128、128×160、256×256 AlGaAs/GaAsQWIP焦平面探测器阵列。用液氮温度下的暗电流和傅里叶红外响应光谱对单元测试器件进行了评估,针对不同材料结构,实现了9μm和10.9μm的截止波长;黑体探测率最高达到2.6×109 cm.Hz1/2.W-1。将128×128 AlGaAs/GaAs QWIP阵列芯片与CMOS读出电路芯片倒装焊互连,成功演示了室温环境下目标的红外热成像;并进一步讨论了提高QWIP组件成像质量的途径。128×128, 128×160 and 256×256 AlGaAs/GaAs quantum well infrared photodetector （ QWIP ） focal plane arrays （FPA） are designed and fabricated . The device with n doped back-illuminated A1GaAs/ GaAs quantum structure is achieved by metal organic chemical vapor deposition （MOCVD） epitaxial growth and standard GaAs integrated circuit processing technology. The device is characterized by dark current and FTIR spectrum at 77 K. The cut-off wavelength was 9 and 10.9μm,respecfively, through different epitaxial structure. The best blackbody detecfivity DB＊ was 2.6×10^9 cm Hz1/2/W. The 128×128 FPA is flip-chip bonded on a CMOS read-out integrated circuit with indium bumps. The infrared thermal images of the targets at room temperature have been successfully demonstrated at an operating temperature of 80 K. In addition, the methods how to improve the image quality are discussed further.

关 键 词：MOCVD ALGAAS/GAAS 量子阱红外探测器 红外热成像 

分 类 号：TN215[电子电信—物理电子学]