Cl_2/Ar/BCl_3ICP刻蚀AlGaN的研究  

Study of ICP Etching of AlGaN with Cl_2/Ar/BCl_3

作　　者：陈亮[1] 亢勇[1] 朱龙源[1] 赵德刚[2] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《微纳电子技术》2007年第7期7-9,共3页Micronanoelectronic Technology

摘　　要：感应耦合等离子体(ICP)刻蚀在AlGaN基紫外探测器台面制作中起着重要作用。在对比了ICP与RIE,ECR等干法刻蚀技术优缺点的基础上,采用Ni作为掩膜,Cl2/Ar/BCl3作为刻蚀气体,对金属有机化学气相淀积生长的n-Al0.45Ga0.55N进行了ICP刻蚀研究。刻蚀速率随着ICP直流偏压的增加而增加,刻蚀速率随着ICP功率的增加先增加较快后增加缓慢。最后结合刻蚀表面的扫描电镜(SEM)分析和俄歇电子能谱(AES)深度分析对刻蚀结果进行了讨论。分析表明,在满足刻蚀表面形貌的同时,较低的直流偏压下刻蚀速率较慢,但损伤较小,这对于制备高性能的紫外探测器是有利的。Inductively coupled plasma （ICP） etching plays an important role in mesa fabrication of AlGaN-based ultraviolet detectors. The characteristics of ICP were compared with RIE and ECR. Ni was used as etching mask, C12/Ar/BC13 were etching of n-Al0. 45 Gao. 55 N grown by metalorganic used as the inductively coupled plasma, and ICP chemical vapor deposition was investigated. The etching rate increases with the increasing ICP DC bias, and doesn＇t increase monotonously with ICP power. At last, ICP etching effect was studied by scanning electron microscope （SEM） and Auger election emission spectroscopy （AES）. The results show that although the etching rate is low at a relative DC bias, but its damage is lighter, which is helpful for performance of the ultraviolet detectors.

关 键 词：感应耦合等离子体 铝镓氮 扫描电镜 俄歇电子能谱 

分 类 号：TN304.2[电子电信—物理电子学] TN405.98