耐高温SOI结构压力敏感芯片的研制  

Development of High-Temperature Pressure Sensor Chip Based on SOI Structure

作　　者：李新[1] 庞世信[2] 徐开先[2] 孙承松[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110023 [2]沈阳仪表科学研究院,沈阳110043

出　　处：《微纳电子技术》2007年第7期172-173,182,共3页Micronanoelectronic Technology

摘　　要：如何制作与生产适宜高温环境下应用的压力传感器，一直备受关注。在SIMOX技术SOI晶圆的基础上，设计了压力敏感芯片结构，并基于MEMS工艺制作了芯片。电桥采用1mA恒流源供电，在300℃下，满量程输出≥180mV，灵敏度为30-40mV/（mA.MPa），非线性≤1‰FS，重复性≤1‰FS。与常温测试结果相比，300℃高温下，敏感芯片的静态性能没有明显差异。The manufacture and the production for pressure sensor operating under the high temperature environment are paid attention all the time. Based on the SIMOX SOI wafer, the SOI structure pressure gauge chip was designed, and the gauge chips were manufactured with MEMS techniques. The gauge chip was tested under 300 ℃ with lmA operating current. The full meas- uring range output was more than 180 mV, the sensitivity ranges were from 30 to 40 mV/（mA · MPa）, the non-linearity was less than I%0FS, the repetition was less than 1%0FS. Compared with the results under the normal temperature, the static performances of gauge chip have no distinct diference under 300℃.

关 键 词：高温 SOI结构 压力敏感芯片 

分 类 号：TP212.12[自动化与计算机技术—检测技术与自动化装置]