准二维电子系统的远红外栅压比谱  

FAR INFRARED GATE VOLTAGE RATIO SPECTRA OF QUASI TWO DIMENSIONAL ELECTRON SYSTEMS

作　　者：胡灿明[1,2] 陈张海[1,2] 史国良[1,2] 陆卫[1,2] 张波[1,2] 石晓红[1,2] 刘普霖[1,2] 沈学础[1,2] 

机构地区：[1]中国科学院上海技术物理研究所 [2]中国科学院红外物理国家重点实验室

出　　处：《红外与毫米波学报》1997年第2期114-120,共7页Journal of Infrared and Millimeter Waves

基　　金：中国科学院留学回国人员择优支持经费资助

摘　　要：讨论应用快扫描傅里叶变换光谱仪研究异质结表面及量子阱中二维电子气的高频动力学性质，利用制备有金属栅极的异质结样品的肖特基场效应特性，通过光谱仪控制栅压门电源交替选择栅压扫描，获得了二维电子气的吸收栅压比谱，由此观察到该低维系统的几类基本红外激发，包括回旋共振。Rapid scan Fourier transform spectroscopy was used to study the high frequency dynamic properties of the two dimensional electron gases (2DEG) confined at the interface of heterojunctions or in a quantum well. By using a multi channel voltage supply unit controlled by the spectrometer and accumulating alternately a certain number of scans at two different gate voltages, gate voltage ratio spectra were obtained on samples prepared with metallic front gates. Several fundamental infrared excitations, namely, cyclotron resonance, 2D plasmon and the collective intersubband resonance were observed in these low dimensional systems.

关 键 词：二维电子气 红外激发 异质结 半导体 

分 类 号：O471.1[理学—半导体物理]