InGaN太阳电池转换效率的理论计算  

Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells

作　　者：文博[1] 周建军[1] 江若琏[1] 谢自力[1] 陈敦军[1] 姬小利[1] 韩平[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《Journal of Semiconductors》2007年第9期1392-1395,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:2006CB6049);国家自然科学基金(批准号:60476030);江苏省自然科学基金(批准号:BK2006126)资助项目~~

摘　　要：根据pn结太阳电池的电流-电压方程,计算了在理想情况下,InGaN材料应用于单结、双结和三结太阳电池时,其转换效率可分别高达27.3%,36.6%和41.3%,均高于通常半导体材料太阳电池.同时,计算还得出了3种InGaN太阳电池的最佳带隙宽度及相应的In组分,为设计InGaN太阳电池提供了理论依据.Based on the current-voltage equation for pn junction solar cells, the conversion efficiency under ideal conditions for an InGaN solar cell was calculated. The conversion efficiencies of one-junction, two-junction, and three-junction Inx Ga1 - x N solar cells were calculated to 27.3% ,36. 6% ,and 41.3% ,respectively,all of which are higher than those of common materials. The optimal band gaps and the indium contents of these InxGa1-x N solar cells were also obtained, giving a theoretical basis for the design of Inx Ga1-x N solar cells.

关 键 词：INGAN 太阳电池 转换效率 理论计算 

分 类 号：TM914.4[电气工程—电力电子与电力传动]