Pb(Zr,Ti)O_3铁电场效应晶体管的制备及性能研究  

Fabrication and Characteristics of Pb(Zr,Ti)O_3Ferroelectric Field-Effect Transistor

作　　者：于军[1] 周文利[1] 赵建洪[1] 谢基凡[1] 黄歆 

机构地区：[1]华中理工大学团体电子学系,武汉430074

出　　处：《Journal of Semiconductors》1997年第5期371-374,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：采用PLD（PulsedLaserDeposition）工艺制备Au／Pb（Zr，Ti）O3／SiO2／Si异质结构．这种结构的铁电场效应晶体管（FFET）的电性能由I－V和C－V特性表征．Au／Pb（Zr，Ti）O3／SiO2／Si异质结构的C－V曲线表现为极化开关，对应500nmPZT，记忆窗口约3V．实验表明Au／PZT／SiO2／Si栅结构实现了铁电体场效应存储性能．Ferroelectric field-effect transistor heterostructures of Au/Pb (Zr, Ti )O3/SiO2/Si have been fabricated be using pulsed laser ablation deposition technique. Electrical properties of these ferroelectric FETs have been characterized through both the current vs.voltage (I-V) and capacitance vs. voltage (C-V) measurements. The C-V characteristics of Au/Pb (Zr,Ti)O3/SiO2/Si heterostructures demonstrate a polarization switching behavior,showing a memory window as much as 3V in a 500 nm-thick pulsed laser ablation deposition derived PZT film. In addition, experimental results reveal that Au/Pb (Zr, Ti ) O3/SiO2/Si gate structure has realized ferroelectric field-effect memorization.

关 键 词：铁电薄膜 场效应晶体管 FET 

分 类 号：TN386[电子电信—物理电子学] TN304.9