环栅CMOS/SOI的X射线总剂量辐射效应研究  

X-ray Total Dose Radiation Effect on CMOS/SOI with Enclose-gate Structure

作　　者：贺威[1] 张恩霞[1] 钱聪[1] 张正选[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所

出　　处：《固体电子学研究与进展》2007年第3期314-316,334,共4页Research & Progress of SSE

摘　　要：采用硅离子注入工艺对注氧隔离(SIMOX)绝缘体上硅(SOI)材料作出改性,分别在改性材料和标准SIMOXSOI材料上制作部分耗尽环型栅CMOS/SOI器件,并采用10keVX射线对其进行了总剂量辐照试验。实验表明,同样的辐射总剂量条件下,采用改性材料制作的器件与标准SIMOX材料制作的器件相比,阈值电压漂移小得多,亚阈漏电也得到明显改善,说明改性SIMOXSOI材料具有优越的抗总剂量辐射能力。Silicon ion implantations was used to improve SIMOX SOI substrate. Partially-depleted CMOS/SOI devices with enclose-gate structure were fabricated on improved SIMOX substrate and standard SIMOX substrate. 10 keV X-ray test was performed and the results demonstrate that the improved CMOS/SOI devices have less threshold voltage shifts and have smaller leakage current after the same total dose irradiation as compared to standard CMOS/SOI devices.

关 键 词：注氧隔离 绝缘体上硅 总剂量辐射效应 

分 类 号：TN386[电子电信—物理电子学] TN405