一种850nm单片集成光接收机前端  

A Monolithically Integrated 850 nm Optical Receiver Front End

作　　者：冯欧[1] 冯忠[1] 杨立杰[1] 焦世龙[2] 蒋幼泉[1] 陈堂胜[2] 李拂晓[1] 叶玉堂[3] 

机构地区：[1]南京电子器件研究所GaAs工程中心,南京210016 [2]单片集成电路与模块国家级重点实验室,南京210016 [3]电子科技大学光电信息学院,成都610054

出　　处：《固体电子学研究与进展》2007年第3期350-355,共6页Research & Progress of SSE

基　　金：国家自然科学基金(No60277008);单片集成电路与模块国家级重点实验室基金(No51491050105DZ0201)

摘　　要：采用0.5μm GaAs PHEMT工艺和台面光刻互连工艺研制了一种850nm光接收机前端单片电路,包括金属-半导体-金属光探测器和跨阻前置放大器。探测器光敏面积约2000μm2,电容小于0.15pF,4V偏压下的暗电流小于14nA。跨阻前置放大器-3dB带宽接近10GHz,跨阻增益约43dBΩ。光接收机前端在输入2.5Gb/s非归零伪随机二进制序列调制的850nm光信号下得到较为清晰的输出眼图。An 850 nm monolithically integrated optical receiver front end has been developed with 0. 5μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a metal-semiconductor-metal （MSM） photodetector and a transimpedance preamplifier. The photodetector has a photosensitive area and a capacitance of 2000 μm^2 and 0. 15 pF respectively, as well as a dark current of less than 14 nA under a bias of 4 V. The transimpedance preamplifier has a -3 dB bandwidth close to 10 GHz, with a transimpedance of 43 dBΩ; The front end has a relatively clear output eye diagram for the 850 nm optical signd modulated by 2.5 Gb/s NRZ pseudorandom binary sequence.

关 键 词：金属-半导体-金属光探测器 跨阻前置放大器 光电集成电路 台面 眼图 

分 类 号：TN929.1[电子电信—通信与信息系统]