一维AlN纳米结构制备进展  

Progress in Preparation of 1D AlN Nano-Structures

作　　者：童麟[1] 谢自力[1] 修向前[1] 张琦[1] 聂超[1] 刘斌[1] 张荣[1] 

机构地区：[1]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《微纳电子技术》2007年第9期868-874,905,共8页Micronanoelectronic Technology

基　　金：国家重点基础研究发展规划(2006CB6049);国家高技术研究发展规划(2006AA03A103;2006AA03A142);国家自然科学基金(60421003;60676057);教育部重大项目(10416);高等学校博士学科点专项科研基金(20050284004);江苏省自然科学基金(BK2005210)

摘　　要：采用CVD、碳纳米管模板法等方法已经制成了纳米线、纳米管等多种结构;同时研制成功多种一维纳米结构的阵列。用CVD方法合成的AlN纳米线直径为几十纳米、纳米线长度可以达到几十微米;用碳纳米管模板法可以控制AlN纳米线的直径。同时,AlN纳米线也已经在场致发射的研究领域得到应用。综述了AlN一维纳米结构材料的制备方法,分析研究了AlN一维纳米结构的合成反应机理和材料特性。Several 1D nano-structures, including nanowires, nanotubes and nanorods, are synthesized by chemical vapor deposition （CVD） or the template of carbon nanotube. Furthermore, the array of the 1D AlN nano-structures is fabricated successfully. The diameter of AlN nanowires synthesized by CVD commonly reaches tens of nanometers and the length reaches up to several tens of microns. And the diameter of AlN nanowires can be controlled by the size of carbon nanotubes, which providing another way to obtain uniform AlN nanowires. The field emission characteristics of AlN nanowires are studied, which can be applied in displaying. The synthesis of 1D AlN nano-structures is summarized systematically, and the synthesis mechanism and the material properties of AlN nano-structures are investigated intensively.

关 键 词：氮化铝 一维 纳米结构 

分 类 号：TB34[一般工业技术—材料科学与工程] TB383