基于GaAs/AlAs腐蚀自停止的新型水听器工艺  

Fabrication Technology of a Novel Hydrophone Based on GaAs/AlAs Etch-Stop

作　　者：仝召民[1] 薛晨阳[1] 张斌珍[1] 王勇[2] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051 [2]中国电子科技集团公司第十三研究所,石家庄050000

出　　处：《纳米技术与精密工程》2007年第3期230-234,共5页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(50405025;50535030)

摘　　要：针对感应耦合等离子(ICP)刻蚀气室气体分布不均匀性所导致的被刻蚀台面中间厚、边缘薄及干法刻蚀后残余应力大等缺点,进行了GaAs/AlAs的选择性湿法腐蚀工艺研究.腐蚀液为50%一水柠檬酸(C6H8O7.H2O)溶液与30%双氧水(H2O2)的混合物,当二者体积比为3∶1时,GaAs/AlAs的选择比达到79以上.用原子力显微镜(AFM)和扫描电镜(SEM)对腐蚀后的试验片测试后发现,该体积比腐蚀液腐蚀的试验片具有表面粗糙度低、刻蚀各向异性好、选择比高等优点,能够满足传感器加工的需要;结合试验结果,设计了一种待加工梁厚3μm的外延材料结构,并对传感器的加工工艺进行了优化;最后,采用ANSYS对所设计的结构进行了仿真分析,仿真结果表明,该结构具有可行性,可实现水平面内的声学探测.Because of different etching velocities of inductively coupled plasma（ICP） etching induced by the chamber＇s poor gas distribution and the high remnant stress with dry etching technology, selective wet etching technology of GaAs/AlAs was carried out. Etching recipe was 50 % monohydrate citric acid and 30 % H2O2, the selectivity ratio of GaAs/AlAs reached 79 at a volume ratio of 3 ： 1. Results of AFM and SEM measurements show that etched surface has excellent characteristics such as low roughness, good anisotropy and high selectivity ratio, which can meet the need of the sensor＇ s fabrication. By experimental results, the structure of a cantilever epitaxy layer with 3μm depth was designed, and the fabricated technology was optimized. At last, the structure model was established by the finite element analysis software ANSYS. Emulation results show the vadility of the proposed structure and by it the horizontal acoustic signal detection can be realized.

关 键 词：GAAS/ALAS 选择性湿法腐蚀 一水柠檬酸 ANSYS 

分 类 号：TB565.1[交通运输工程—水声工程] TG172[理学—物理]