云南高校图书馆联盟文献共享服务平台- GAAS/ALAS

GAAS/ALAS: 作品数：43被引量：25H指数：2; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：江德生李国华韩和相汪兆平杨富华更多>>; 相关机构：中国科学院中北大学南京电子器件研究所福州大学更多>>; 相关期刊：《半导体杂志》《Chinese Physics Letters》《微电子学与计算机》《广东工业大学学报》更多>>; 相关基金：国家自然科学基金山东省自然科学基金国家攀登计划国家重点基础研究发展计划更多>>

Heat conduction of multilayer nanostructures with consideration of coherent and incoherent phonon transport被引量：1: 《Nano Research》2022年第10期9492-9497,共6页Bin Liu Yangyu Guo Vladimir I.Khvesyuk Alexander A.Barinov Moran Wang; We report a theoretical investigation of coherent-to-incoherent heat conduction in multilayer nanostructures.In the coherent regime where the phonon motion is quasi-harmonic,the elastic continuum model gives accurate ...; 关键词：GaAs/AlAs superlattices thermal conductivity coherent and incoherent phonon transport continuum model

GaMnAs/AlAs/GaAs/AlAs/GaMnAs隧道结的磁致电阻效应: 《淮阴师范学院学报（自然科学版）》2022年第3期207-214,共8页鲁明亮马丽娟陶永春; 国家自然科学基金项目(1187040632)。; 利用k·p微扰和多能带量子传输边界相结合,推导出自旋空间中的量子坐标轴变换矩阵,以及空穴透过GaMnAs/AlAs/GaMnAs/AlAs/GaMnAs双势垒铁磁半导体(FS)隧道结的透射系数和磁致电阻(TMR)理论公式.计算了重空穴和轻空穴透射系数随入射能量...; 关键词：铁磁性半导体隧道结磁致电阻

δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响（英文）: 《发光学报》2019年第10期1240-1246,共7页郑卫民黄海北李素梅丛伟艳王爱芳李斌宋迎新; Supported by Shandong Province Natural Science Foundation(ZR2017MF018);National Natural Science Foundation of China(61675223)~~; 在15 nm GaAs/5 nm AlAs单量子阱的GaAs阱层中间,分别进行不同浓度剂量的铍受主的δ-掺杂。铍受主在量子阱层中的扩散浓度分布,由扩散方程数值解出。高温下扩散在GaAs阱层中的Be受主将发生电离,成为带负电荷的受主离子,同时也向量子阱...; 关键词：掺杂剂量 δ-掺杂 GaAs/AlAs量子阱受主的扩散分布

Raman spectrum study of δ-doped GaAs/AlAs multiple-quantum wells: 《Chinese Physics B》2018年第1期514-519,共6页郑卫民丛伟艳李素梅王爱芳李斌黄海北; Project supported by Shandong Province Natural Science Foundation,China(Grant No.ZR2017MF018);the National Natural Science Foundation of China(Grant No.61675223); Three samples of GaAs/A1As multiple-quantum wells with different quantum well widths and tS-doped with Be ac- ceptors at the well center were grown on （100） GaAs substrates by molecular beam epitaxy. Polarized Raman...; 关键词：coupled mode Raman spectrum δ-doped GaAs/A1As multiple quantum wells

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well: 《Chinese Physics B》2016年第4期330-334,共5页郑卫民李素梅丛伟艳王爱芳李斌黄海北; supported by the National Natural Science Foundation of China(Grant No.61178039);the Natural Science Foundation of Shandong Province;China(Grant No.ZR2012FM028); A series of GaAs/A1As multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photolu- minescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition ...; 关键词：GaAs/GaA1As mulitiple quantum wells heavy- and light-hole excitons photoluminescence spec-tra variational calculation

Chaotic dynamics dependence on doping density in weakly coupled GaAs/AlAs superlattices: 《Journal of Semiconductors》2012年第9期8-12,共5页杨癸李远红张凤英李玉琦; supported by the National Natural Science Foundation of China(Nos.11047108,11147197,11005003);the Research Project of Basic and Cutting-Edge Technology of Henan Province,China(No.112300410183);the Education Department of Henan Province, China(No.2011B140002); A discrete sequential tunneling model is used for studying the influence of the doping density on the dynamical behaviors in weakly coupled GaAs/AlAs superlattices. Driven by the DC bias, the system exhibits self- sus...; 关键词：weakly-coupled superlattice current oscillation the hysteresis loop

量子限制受主远红外电致发光器件的制备与测量: 《物理学报》2010年第4期2728-2733,共6页刘静郑卫民宋迎新初宁宁李素梅丛伟艳; 国家自然科学基金(批准号:60776044);山东省自然科学基金(批准号:2006ZRA10001)资助的课题~~; 采用分子束外延技术生长GaAs/AlAs三量子阱,并在中间的GaAs阱中δ-掺杂浅受主杂质Be原子,制作出量子限制受主远红外Teraherz原型电致发光器件.实验上测量得到4.5K时器件的电致发光谱(EL)和电传输特性(I-V曲线).在EL发射谱中清楚地观察到...; 关键词：量子限制效应电致发光共振隧穿效应 δ-掺杂GaAs/AlAs三量子阱

Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field: 《Communications in Theoretical Physics》2009年第10期710-714,共5页YUAN Jian-Hui XIE Wen-Fang HE Li-Li; Supported by the National Natural Science Foundation of China under Grant No.10775035; Using the configuration-integration methods （CI） [Phys. Rev. B 45 （1992） 19], we report the results of the Hydrogenie-impurity ground state in a GaAs/AIAs spherical quantum dot under an electric field. We discuss ...; 关键词：DONOR quantum dots binding energy electric field

Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells: 《Chinese Physics B》2009年第9期3975-3979,共5页李素梅郑卫民宋迎新刘静初宁宁; supported by the National Natural Science Foundation of China (Grant No 60776044);the Natural Science Foundation of Shandong Province,China (Grant No 2006ZRA10001); This paper studies the dynamics of intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells （MQW） with doping at the centre by time-resolved pump-probe spectroscopy using a picosecond free elec...; 关键词：carrier relaxation multiple quantum well intra-acceptor dynamics PUMP-PROBE

基于介观压阻效应的GaAs/AlAs/In_(0.1)Ga_(0.9)As贴膜微机械陀螺的设计: 《弹箭与制导学报》2008年第5期61-63,共3页罗文华温廷敦毛海央熊继军吴瑞; 国家自然科学基金(60476043)资助; 首先说明了微机械陀螺的四种传统检测方法的局限性,然后设计了一种新型的基于介观压阻效应的GaAs/AlAs/In0.1Ga0.9As贴膜微机械陀螺,指出了该陀螺设计时应注意的几个方面,并且利用介观压阻理论分析得出用共振隧穿薄膜作为敏感元件能将...; 关键词：微机械陀螺介观压阻效应共振隧穿薄膜

GAAS/ALAS