GaMnAs/AlAs/GaAs/AlAs/GaMnAs隧道结的磁致电阻效应  

Magnetoresistance Effect of GaMnAs/AlAs/GaAs/AlAs/GaMnAs Tunnel Junctions

作　　者：鲁明亮 马丽娟 陶永春[2] LU Ming-liang;MA Lijuan;TAO Yong-chun(School of Rail Transportation,Nanjing Technical Vocational College,Nanjing Jiangsu 210019,China;School of Physics and Technology,Nanjing Normal University,Nanjing Jiangsu 210023,China)

机构地区：[1]南京高等职业技术学校轨道交通学院,江苏南京210019 [2]南京师范大学物理科学与技术学院,江苏南京210023

出　　处：《淮阴师范学院学报（自然科学版）》2022年第3期207-214,共8页Journal of Huaiyin Teachers College;Natural Science Edition

基　　金：国家自然科学基金项目(1187040632)。

摘　　要：利用k·p微扰和多能带量子传输边界相结合,推导出自旋空间中的量子坐标轴变换矩阵,以及空穴透过GaMnAs/AlAs/GaMnAs/AlAs/GaMnAs双势垒铁磁半导体(FS)隧道结的透射系数和磁致电阻(TMR)理论公式.计算了重空穴和轻空穴透射系数随入射能量的变化,得到TMR与两层FS磁化方向夹角(θ)的关系.研究发现透射系数随着入射能量递增出现明显震荡,相对于非磁性半导体,轻空穴和重空穴透射系数的差值减小;与单势垒隧道结不同,双势垒隧道结中TMR和sin^(2)(θ/2)之间呈现出非线性关系.其结果对磁性半导体隧道结的研究具有一定的参考价值.In this paper,the k·pmodel combined with the multiband quantum transmitting boundary method was applied to calculate the transfer-matrix of spin-polarized resonant in the spin space,and the transmission coefficient of the tunnel junction and the theoretical formula of magnetoresistance(TMR)of GaMnAs/AlAs/GaMnAs/AlAs/GaMnAs double barrier FS tunnel junction transmitted by holes are obtained.The relationship between the transmission coefficient and the incident energy was calculated for heavy and light holes.The relationship between TMR and the arbitrary angleθbetween the magnetic direction of two FS was obtained.It was shown that the transmission coefficient exhibits significant oscillation with increasing incident energy,and the difference of transmission coefficients between light and heavy holes decreases with respect to the non-magnetic semiconductor.Unlike the single barrier tunnel junction,the TMR in the double barrier tunnel junction was linearly uncorrelated with sin^(2)(θ/2).This work will provide a reference for studying tunnel junctions of magnetic semiconductor.

关 键 词：铁磁性半导体 隧道结 磁致电阻 

分 类 号：O472.4[理学—半导体物理]